IPB120N06S4H1ATMA2 Priser (USD) [59165stk Lager]
- 1 pcs$0.66087
- 1,000 pcs$0.62792
- Delnummer:
- IPB120N06S4H1ATMA2
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 60V 120A TO263-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - singel, Power Driver-moduler, Dioder - likerettere - matriser, Transistorer - programmerbar enhet, Tyristorer - SCR-er - moduler, Transistorer - spesialformål, Dioder - RF and Transistorer - FET, MOSFET - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPB120N06S4H1ATMA2 electronic components. IPB120N06S4H1ATMA2 can be shipped within 24 hours after order. If you have any demands for IPB120N06S4H1ATMA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB120N06S4H1ATMA2 Produktegenskaper
Delnummer :
IPB120N06S4H1ATMA2
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 60V 120A TO263-3
Serie :
Automotive, AEC-Q101, OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
2.4 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 200µA
Gate Lading (Qg) (Max) @ Vgs :
270nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
21900pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
250W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO263-3-2
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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