IRFB3307ZPBF Priser (USD) [35289stk Lager]
- 1 pcs$1.00762
- 10 pcs$0.91188
- 100 pcs$0.73264
- 500 pcs$0.56983
- 1,000 pcs$0.47214
- Delnummer:
- IRFB3307ZPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 75V 120A TO-220AB.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - Arrays, Dioder - Zener - Singel, Dioder - RF, Tyristorer - TRIAC, Dioder - likerettere - singel, Dioder - Bridge likerettere, Transistorer - FET, MOSFET - En and Transistorer - JFET-er ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFB3307ZPBF electronic components. IRFB3307ZPBF can be shipped within 24 hours after order. If you have any demands for IRFB3307ZPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB3307ZPBF Produktegenskaper
Delnummer :
IRFB3307ZPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 75V 120A TO-220AB
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
75V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
5.8 mOhm @ 75A, 10V
Vgs (th) (Max) @ Id :
4V @ 150µA
Gate Lading (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4750pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
230W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220AB
Pakke / sak :
TO-220-3
Siste nytt
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