TK39J60W,S1VQ Priser (USD) [9590stk Lager]
- 1 pcs$4.72871
- 25 pcs$3.87569
- 100 pcs$3.49762
- 500 pcs$2.93043
- Delnummer:
- TK39J60W,S1VQ
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 600V 38.8A TO-3P.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Dioder - Zener - Singel, Dioder - likerettere - singel, Power Driver-moduler, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - RF, Transistorer - IGBT-er - moduler and Transistorer - JFET-er ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK39J60W,S1VQ electronic components. TK39J60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK39J60W,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK39J60W,S1VQ Produktegenskaper
Delnummer :
TK39J60W,S1VQ
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 600V 38.8A TO-3P
Serie :
DTMOSIV
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
65 mOhm @ 19.4A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 1.9mA
Gate Lading (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 300V
FET-funksjon :
Super Junction
Effektdissipasjon (maks) :
270W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-3P(N)
Pakke / sak :
TO-3P-3, SC-65-3
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