IRFD224PBF Priser (USD) [56337stk Lager]
- 1 pcs$0.69405
- 2,500 pcs$0.26190
- Delnummer:
- IRFD224PBF
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 250V 630MA 4-DIP.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - RF, Power Driver-moduler, Transistorer - Bipolar (BJT) - RF, Dioder - Zener - Singel, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Dioder - Zener - Arrays and Tyristorer - DIAC, SIDAC ...
- Konkurransefordel:
- We specialize in Vishay Siliconix IRFD224PBF electronic components. IRFD224PBF can be shipped within 24 hours after order. If you have any demands for IRFD224PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD224PBF Produktegenskaper
Delnummer :
IRFD224PBF
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 250V 630MA 4-DIP
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
250V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.1 Ohm @ 380mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
260pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
1W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
4-DIP, Hexdip, HVMDIP
Pakke / sak :
4-DIP (0.300", 7.62mm)
Siste nytt
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