TK10P60W,RVQ Priser (USD) [74971stk Lager]
- 1 pcs$0.55597
- 2,000 pcs$0.55320
- Delnummer:
- TK10P60W,RVQ
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N CH 600V 9.7A DPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Dioder - Bridge likerettere, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - FET, MOSFET - RF, Transistorer - IGBT-er - moduler, Transistorer - FET, MOSFET - Arrays, Transistorer - Bipolar (BJT) - Arrays and Dioder - Variabel kapasitet (Varicaps, Varactors) ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK10P60W,RVQ electronic components. TK10P60W,RVQ can be shipped within 24 hours after order. If you have any demands for TK10P60W,RVQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK10P60W,RVQ Produktegenskaper
Delnummer :
TK10P60W,RVQ
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N CH 600V 9.7A DPAK
Serie :
DTMOSIV
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
430 mOhm @ 4.9A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 500µA
Gate Lading (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
700pF @ 300V
FET-funksjon :
Super Junction
Effektdissipasjon (maks) :
80W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DPAK
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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