IPS65R1K4C6AKMA1 Priser (USD) [88227stk Lager]
- 1 pcs$0.40556
- 10 pcs$0.33934
- 100 pcs$0.26827
- 500 pcs$0.20806
- 1,000 pcs$0.16426
- Delnummer:
- IPS65R1K4C6AKMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 650V 3.2A TO-251.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Transistorer - Bipolar (BJT) - Arrays, Transistorer - FET, MOSFET - En, Dioder - Zener - Arrays, Dioder - RF, Tyristorer - SCR-er - moduler, Transistorer - programmerbar enhet and Tyristorer - DIAC, SIDAC ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPS65R1K4C6AKMA1 electronic components. IPS65R1K4C6AKMA1 can be shipped within 24 hours after order. If you have any demands for IPS65R1K4C6AKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPS65R1K4C6AKMA1 Produktegenskaper
Delnummer :
IPS65R1K4C6AKMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 650V 3.2A TO-251
Serie :
CoolMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.4 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 100µA
Gate Lading (Qg) (Max) @ Vgs :
10.5nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
225pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
28W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO251-3
Pakke / sak :
TO-251-3 Stub Leads, IPak
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