IRF7759L2TRPBF Priser (USD) [34949stk Lager]
- 1 pcs$1.18513
- 4,000 pcs$1.17924
- Delnummer:
- IRF7759L2TRPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 75V DIRECTFET L8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Dioder - likerettere - matriser, Dioder - RF, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Tyristorer - TRIAC, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - RF and Transistorer - IGBT-er - moduler ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF7759L2TRPBF electronic components. IRF7759L2TRPBF can be shipped within 24 hours after order. If you have any demands for IRF7759L2TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7759L2TRPBF Produktegenskaper
Delnummer :
IRF7759L2TRPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 75V DIRECTFET L8
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
75V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
26A (Ta), 375A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
2.3 mOhm @ 96A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
300nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
12222pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
3.3W (Ta), 125W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DIRECTFET L8
Pakke / sak :
DirectFET™ Isometric L8
Siste nytt
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