FCP11N60N-F102 Priser (USD) [54901stk Lager]
- 1 pcs$0.71220
- Delnummer:
- FCP11N60N-F102
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 600V 10.8A TO220F.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Tyristorer - SCR, Dioder - likerettere - singel, Transistorer - spesialformål, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - programmerbar enhet, Tyristorer - TRIAC and Dioder - Zener - Singel ...
- Konkurransefordel:
- We specialize in ON Semiconductor FCP11N60N-F102 electronic components. FCP11N60N-F102 can be shipped within 24 hours after order. If you have any demands for FCP11N60N-F102, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCP11N60N-F102 Produktegenskaper
Delnummer :
FCP11N60N-F102
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 600V 10.8A TO220F
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
299 mOhm @ 5.4A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
35.6nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1505pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
94W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220F
Pakke / sak :
TO-220-3 Full Pack
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