SI3585CDV-T1-GE3 Priser (USD) [431769stk Lager]
- 1 pcs$0.25707
- 10 pcs$0.21515
- 100 pcs$0.16132
- 500 pcs$0.11830
- 1,000 pcs$0.09141
- Delnummer:
- SI3585CDV-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N/P-CH 20V 3.9A 6TSOP.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - likerettere - matriser, Transistorer - IGBT-er - moduler, Tyristorer - TRIAC, Power Driver-moduler, Tyristorer - SCR, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - RF and Transistorer - programmerbar enhet ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI3585CDV-T1-GE3 electronic components. SI3585CDV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3585CDV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3585CDV-T1-GE3 Produktegenskaper
Delnummer :
SI3585CDV-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N/P-CH 20V 3.9A 6TSOP
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
N and P-Channel
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
3.9A, 2.1A
Rds On (Max) @ Id, vgs :
58 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
4.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 10V
Kraft - Maks :
1.4W, 1.3W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
SOT-23-6 Thin, TSOT-23-6
Leverandørenhetspakke :
6-TSOP
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