IPD60N10S4L12ATMA1 Priser (USD) [173756stk Lager]
- 1 pcs$0.21287
- 2,500 pcs$0.19527
- Delnummer:
- IPD60N10S4L12ATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH TO252-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - Arrays, Power Driver-moduler, Dioder - likerettere - singel, Dioder - likerettere - matriser, Transistorer - spesialformål, Transistorer - FET, MOSFET - Arrays, Tyristorer - SCR-er - moduler and Transistorer - Bipolar (BJT) - Singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPD60N10S4L12ATMA1 electronic components. IPD60N10S4L12ATMA1 can be shipped within 24 hours after order. If you have any demands for IPD60N10S4L12ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD60N10S4L12ATMA1 Produktegenskaper
Delnummer :
IPD60N10S4L12ATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH TO252-3
Serie :
Automotive, AEC-Q101, HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
12 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 46µA
Gate Lading (Qg) (Max) @ Vgs :
49nC @ 10V
Vgs (maks) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
3170pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
94W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO252-3-313
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
Siste nytt
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