TPN2010FNH,L1Q Priser (USD) [146815stk Lager]
- 1 pcs$0.26459
- 5,000 pcs$0.26327
- Delnummer:
- TPN2010FNH,L1Q
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 250V 5.6A 8TSON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Power Driver-moduler, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - programmerbar enhet, Transistorer - IGBT-er - singel, Transistorer - FET, MOSFET - Arrays and Tyristorer - TRIAC ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TPN2010FNH,L1Q electronic components. TPN2010FNH,L1Q can be shipped within 24 hours after order. If you have any demands for TPN2010FNH,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN2010FNH,L1Q Produktegenskaper
Delnummer :
TPN2010FNH,L1Q
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 250V 5.6A 8TSON
Serie :
U-MOSVIII-H
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
250V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
198 mOhm @ 2.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 200µA
Gate Lading (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
600pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
700mW (Ta), 39W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-TSON Advance (3.3x3.3)
Pakke / sak :
8-PowerVDFN
Siste nytt
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