SI2323DDS-T1-GE3 Priser (USD) [406049stk Lager]
- 1 pcs$0.09109
- 3,000 pcs$0.08604
- Delnummer:
- SI2323DDS-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET P-CH 20V 5.3A SOT-23.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - DIAC, SIDAC, Transistorer - JFET-er, Transistorer - IGBT-er - singel, Dioder - Bridge likerettere, Dioder - likerettere - matriser, Power Driver-moduler, Transistorer - Bipolar (BJT) - RF and Transistorer - IGBT-er - moduler ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI2323DDS-T1-GE3 electronic components. SI2323DDS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2323DDS-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2323DDS-T1-GE3 Produktegenskaper
Delnummer :
SI2323DDS-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET P-CH 20V 5.3A SOT-23
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, vgs :
39 mOhm @ 4.1A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
36nC @ 8V
Vgs (maks) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
1160pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
960mW (Ta), 1.7W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
SOT-23
Pakke / sak :
TO-236-3, SC-59, SOT-23-3
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