TK34E10N1,S1X Priser (USD) [64054stk Lager]
- 1 pcs$0.66896
- 50 pcs$0.53567
- 100 pcs$0.46873
- 500 pcs$0.34386
- 1,000 pcs$0.27147
- Delnummer:
- TK34E10N1,S1X
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 100V 75A TO-220.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - likerettere - matriser, Transistorer - FET, MOSFET - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Tyristorer - TRIAC, Transistorer - spesialformål, Transistorer - Bipolar (BJT) - Singel, Power Driver-moduler and Dioder - Zener - Arrays ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK34E10N1,S1X electronic components. TK34E10N1,S1X can be shipped within 24 hours after order. If you have any demands for TK34E10N1,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK34E10N1,S1X Produktegenskaper
Delnummer :
TK34E10N1,S1X
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 100V 75A TO-220
Serie :
U-MOSVIII-H
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
9.5 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
4V @ 500µA
Gate Lading (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2600pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
103W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220
Pakke / sak :
TO-220-3
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