IXFH16N120P Priser (USD) [6557stk Lager]
- 1 pcs$7.22307
- 10 pcs$6.56819
- 100 pcs$5.58296
- Delnummer:
- IXFH16N120P
- Produsent:
- IXYS
- Detaljert beskrivelse:
- MOSFET N-CH 1200V 16A TO-247.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - IGBT-er - Arrays, Tyristorer - SCR-er - moduler, Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - RF, Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Arrays and Dioder - likerettere - matriser ...
- Konkurransefordel:
- We specialize in IXYS IXFH16N120P electronic components. IXFH16N120P can be shipped within 24 hours after order. If you have any demands for IXFH16N120P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH16N120P Produktegenskaper
Delnummer :
IXFH16N120P
Produsent :
IXYS
Beskrivelse :
MOSFET N-CH 1200V 16A TO-247
Serie :
HiPerFET™, PolarP2™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
1200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
950 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
6.5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
120nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
6900pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
660W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-247AD (IXFH)
Pakke / sak :
TO-247-3
Siste nytt
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