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- Delnummer:
- IRF1104L
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 40V 100A TO-262.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - singel, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - FET, MOSFET - Arrays, Transistorer - Bipolar (BJT) - Arrays, Transistorer - FET, MOSFET - RF, Transistorer - programmerbar enhet, Transistorer - FET, MOSFET - En and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF1104L electronic components. IRF1104L can be shipped within 24 hours after order. If you have any demands for IRF1104L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF1104L Produktegenskaper
Delnummer :
IRF1104L
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 40V 100A TO-262
Serie :
HEXFET®
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
9 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
93nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2900pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.4W (Ta), 170W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-262
Pakke / sak :
TO-262-3 Long Leads, I²Pak, TO-262AA
Siste nytt
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