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- Delnummer:
- PMFPB6532UP,115
- Produsent:
- NXP USA Inc.
- Detaljert beskrivelse:
- MOSFET P-CH 20V 3.5A SOT1118.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Dioder - Zener - Singel, Transistorer - IGBT-er - Arrays, Transistorer - programmerbar enhet, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Tyristorer - SCR, Power Driver-moduler and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in NXP USA Inc. PMFPB6532UP,115 electronic components. PMFPB6532UP,115 can be shipped within 24 hours after order. If you have any demands for PMFPB6532UP,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMFPB6532UP,115 Produktegenskaper
Delnummer :
PMFPB6532UP,115
Produsent :
NXP USA Inc.
Beskrivelse :
MOSFET P-CH 20V 3.5A SOT1118
Serie :
-
Delstatus :
Obsolete
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, vgs :
70 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
6nC @ 4.5V
Vgs (maks) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
380pF @ 10V
FET-funksjon :
Schottky Diode (Isolated)
Effektdissipasjon (maks) :
520mW (Ta), 8.3W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DFN2020-6
Pakke / sak :
6-UDFN Exposed Pad
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