STH80N10F7-2 Priser (USD) [63971stk Lager]
- 1 pcs$0.61123
- 1,000 pcs$0.54617
- Delnummer:
- STH80N10F7-2
- Produsent:
- STMicroelectronics
- Detaljert beskrivelse:
- MOSFET N-CH 100V 80A H2PAK-2.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Tyristorer - DIAC, SIDAC, Power Driver-moduler, Transistorer - IGBT-er - Arrays, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Arrays, Tyristorer - SCR-er - moduler and Transistorer - JFET-er ...
- Konkurransefordel:
- We specialize in STMicroelectronics STH80N10F7-2 electronic components. STH80N10F7-2 can be shipped within 24 hours after order. If you have any demands for STH80N10F7-2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STH80N10F7-2 Produktegenskaper
Delnummer :
STH80N10F7-2
Produsent :
STMicroelectronics
Beskrivelse :
MOSFET N-CH 100V 80A H2PAK-2
Serie :
DeepGATE™, STripFET™ VII
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
9.5 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3100pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
110W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
H2Pak-2
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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