BSZ180P03NS3EGATMA1 Priser (USD) [365089stk Lager]
- 1 pcs$0.10131
- 5,000 pcs$0.09726
- Delnummer:
- BSZ180P03NS3EGATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET P-CH 30V 39.6A TSDSON-8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Dioder - Zener - Arrays, Dioder - RF, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - FET, MOSFET - Arrays, Transistorer - IGBT-er - Arrays, Dioder - likerettere - matriser and Tyristorer - SCR ...
- Konkurransefordel:
- We specialize in Infineon Technologies BSZ180P03NS3EGATMA1 electronic components. BSZ180P03NS3EGATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ180P03NS3EGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ180P03NS3EGATMA1 Produktegenskaper
Delnummer :
BSZ180P03NS3EGATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET P-CH 30V 39.6A TSDSON-8
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
9A (Ta), 39.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
18 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
3.1V @ 48µA
Gate Lading (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (maks) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
2220pF @ 15V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.1W (Ta), 40W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TSDSON-8
Pakke / sak :
8-PowerTDFN
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