IXFN170N25X3 Priser (USD) [3801stk Lager]
- 1 pcs$12.53690
- 10 pcs$11.59686
- 100 pcs$9.90415
- Delnummer:
- IXFN170N25X3
- Produsent:
- IXYS
- Detaljert beskrivelse:
- MOSFET N-CH 250V 170A SOT227B.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - RF, Transistorer - programmerbar enhet, Transistorer - IGBT-er - moduler, Tyristorer - SCR, Transistorer - IGBT-er - Arrays, Tyristorer - TRIAC and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurransefordel:
- We specialize in IXYS IXFN170N25X3 electronic components. IXFN170N25X3 can be shipped within 24 hours after order. If you have any demands for IXFN170N25X3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN170N25X3 Produktegenskaper
Delnummer :
IXFN170N25X3
Produsent :
IXYS
Beskrivelse :
MOSFET N-CH 250V 170A SOT227B
Serie :
HiPerFET™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
250V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
7.4 mOhm @ 85A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 4mA
Gate Lading (Qg) (Max) @ Vgs :
190nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
13500pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
390W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Chassis Mount
Leverandørenhetspakke :
SOT-227B
Pakke / sak :
SOT-227-4, miniBLOC
Siste nytt
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