FDD7N25LZTM Priser (USD) [200440stk Lager]
- 1 pcs$0.18453
- 2,500 pcs$0.17651
- Delnummer:
- FDD7N25LZTM
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 250V 6.2A DPAK-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - programmerbar enhet, Transistorer - FET, MOSFET - En, Transistorer - spesialformål, Tyristorer - SCR, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - RF and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in ON Semiconductor FDD7N25LZTM electronic components. FDD7N25LZTM can be shipped within 24 hours after order. If you have any demands for FDD7N25LZTM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD7N25LZTM Produktegenskaper
Delnummer :
FDD7N25LZTM
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 250V 6.2A DPAK-3
Serie :
UniFET™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
250V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, vgs :
550 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
16nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
635pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
56W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D-Pak
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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