PMFPB8032XP,115 Priser (USD) [316806stk Lager]
- 1 pcs$0.11675
- 3,000 pcs$0.10093
- Delnummer:
- PMFPB8032XP,115
- Produsent:
- Nexperia USA Inc.
- Detaljert beskrivelse:
- MOSFET P-CH 20V 2.7A HUSON6.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - RF, Transistorer - FET, MOSFET - Arrays, Transistorer - Bipolar (BJT) - Singel, Transistorer - FET, MOSFET - En, Dioder - Zener - Arrays, Transistorer - programmerbar enhet, Dioder - Zener - Singel and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
- Konkurransefordel:
- We specialize in Nexperia USA Inc. PMFPB8032XP,115 electronic components. PMFPB8032XP,115 can be shipped within 24 hours after order. If you have any demands for PMFPB8032XP,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMFPB8032XP,115 Produktegenskaper
Delnummer :
PMFPB8032XP,115
Produsent :
Nexperia USA Inc.
Beskrivelse :
MOSFET P-CH 20V 2.7A HUSON6
Serie :
-
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V
Rds On (Max) @ Id, vgs :
102 mOhm @ 2.7A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
8.6nC @ 4.5V
Vgs (maks) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
550pF @ 10V
FET-funksjon :
Schottky Diode (Isolated)
Effektdissipasjon (maks) :
485mW (Ta), 6.25W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
6-HUSON-EP (2x2)
Pakke / sak :
6-UDFN Exposed Pad
Siste nytt
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