SIHA120N60E-GE3 Priser (USD) [15585stk Lager]
- 1 pcs$2.64420
- Delnummer:
- SIHA120N60E-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CHAN E SERIES 600V THIN.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - likerettere - singel, Dioder - Bridge likerettere, Dioder - Zener - Singel, Transistorer - IGBT-er - singel, Transistorer - programmerbar enhet, Transistorer - Bipolar (BJT) - RF, Transistorer - Bipolar (BJT) - Singel and Transistorer - FET, MOSFET - En ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIHA120N60E-GE3 electronic components. SIHA120N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHA120N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHA120N60E-GE3 Produktegenskaper
Delnummer :
SIHA120N60E-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CHAN E SERIES 600V THIN
Serie :
E
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
120 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1562pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
34W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220 Full Pack
Pakke / sak :
TO-220-3 Full Pack
Siste nytt
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