FQU12N20TU Priser (USD) [163825stk Lager]
- 1 pcs$0.24679
- 5,040 pcs$0.24557
- Delnummer:
- FQU12N20TU
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 200V 9A IPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - Arrays, Tyristorer - SCR, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - Arrays, Dioder - likerettere - matriser, Tyristorer - SCR-er - moduler, Transistorer - programmerbar enhet and Dioder - Zener - Singel ...
- Konkurransefordel:
- We specialize in ON Semiconductor FQU12N20TU electronic components. FQU12N20TU can be shipped within 24 hours after order. If you have any demands for FQU12N20TU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQU12N20TU Produktegenskaper
Delnummer :
FQU12N20TU
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 200V 9A IPAK
Serie :
QFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
280 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
910pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.5W (Ta), 55W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
I-PAK
Pakke / sak :
TO-251-3 Short Leads, IPak, TO-251AA
Siste nytt
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