IPI80P04P4L04AKSA1 Priser (USD) [2908stk Lager]
- 500 pcs$0.47711
- Delnummer:
- IPI80P04P4L04AKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET P-CH TO262-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Dioder - likerettere - singel, Dioder - likerettere - matriser, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Arrays, Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Arrays, pre-partisk and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPI80P04P4L04AKSA1 electronic components. IPI80P04P4L04AKSA1 can be shipped within 24 hours after order. If you have any demands for IPI80P04P4L04AKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI80P04P4L04AKSA1 Produktegenskaper
Delnummer :
IPI80P04P4L04AKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET P-CH TO262-3
Serie :
Automotive, AEC-Q101, OptiMOS™
Delstatus :
Obsolete
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
4.7 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
176nC @ 10V
Vgs (maks) :
+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds :
3800pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
125W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO262-3-1
Pakke / sak :
TO-262-3 Long Leads, I²Pak, TO-262AA
Siste nytt
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