IRFHM8228TRPBF Priser (USD) [247954stk Lager]
- 1 pcs$0.14917
- 4,000 pcs$0.12793
- Delnummer:
- IRFHM8228TRPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 25V 19A 8PQFN.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Transistorer - IGBT-er - moduler, Transistorer - FET, MOSFET - Arrays, Power Driver-moduler, Dioder - Zener - Arrays, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - RF and Tyristorer - SCR ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFHM8228TRPBF electronic components. IRFHM8228TRPBF can be shipped within 24 hours after order. If you have any demands for IRFHM8228TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM8228TRPBF Produktegenskaper
Delnummer :
IRFHM8228TRPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 25V 19A 8PQFN
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
25V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
19A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
5.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 25µA
Gate Lading (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1667pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.8W (Ta), 34W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-PQFN (3.3x3.3), Power33
Pakke / sak :
8-PowerTDFN
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