RS1E300GNTB Priser (USD) [235214stk Lager]
- 1 pcs$0.17384
- 2,500 pcs$0.17298
- Delnummer:
- RS1E300GNTB
- Produsent:
- Rohm Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 30V 30A 8-HSOP.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - Arrays, Dioder - likerettere - singel, Dioder - Zener - Arrays, Tyristorer - TRIAC, Transistorer - programmerbar enhet, Transistorer - JFET-er, Transistorer - FET, MOSFET - RF and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
- Konkurransefordel:
- We specialize in Rohm Semiconductor RS1E300GNTB electronic components. RS1E300GNTB can be shipped within 24 hours after order. If you have any demands for RS1E300GNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS1E300GNTB Produktegenskaper
Delnummer :
RS1E300GNTB
Produsent :
Rohm Semiconductor
Beskrivelse :
MOSFET N-CH 30V 30A 8-HSOP
Serie :
-
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
2.2 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
39.8nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 15V
FET-funksjon :
-
Effektdissipasjon (maks) :
3W (Ta), 33W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-HSOP
Pakke / sak :
8-PowerTDFN
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