SIHG47N60EF-GE3 Priser (USD) [8238stk Lager]
- 1 pcs$4.82566
- 10 pcs$4.34134
- 100 pcs$3.56936
- 500 pcs$2.99055
- Delnummer:
- SIHG47N60EF-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 600V 47A TO247AC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - likerettere - matriser, Transistorer - FET, MOSFET - Arrays, Tyristorer - SCR, Power Driver-moduler, Dioder - likerettere - singel and Transistorer - IGBT-er - moduler ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIHG47N60EF-GE3 electronic components. SIHG47N60EF-GE3 can be shipped within 24 hours after order. If you have any demands for SIHG47N60EF-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHG47N60EF-GE3 Produktegenskaper
Delnummer :
SIHG47N60EF-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 600V 47A TO247AC
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
67 mOhm @ 24A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
225nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4854pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
379W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-247AC
Pakke / sak :
TO-247-3
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