SSM6H19NU,LF Priser (USD) [929174stk Lager]
- 1 pcs$0.04401
- 3,000 pcs$0.04379
- Delnummer:
- SSM6H19NU,LF
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 40V 2A 6UDFN.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - Arrays, Dioder - Zener - Arrays, Tyristorer - SCR, Transistorer - spesialformål, Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Arrays, Tyristorer - SCR-er - moduler and Transistorer - Bipolar (BJT) - RF ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage SSM6H19NU,LF electronic components. SSM6H19NU,LF can be shipped within 24 hours after order. If you have any demands for SSM6H19NU,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6H19NU,LF Produktegenskaper
Delnummer :
SSM6H19NU,LF
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 40V 2A 6UDFN
Serie :
U-MOSVII-H
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 8V
Rds On (Max) @ Id, vgs :
185 mOhm @ 1A, 8V
Vgs (th) (Max) @ Id :
1.2V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
2.2nC @ 4.2V
Vgs (maks) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
130pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
1W (Ta)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
6-UDFN (2x2)
Pakke / sak :
6-UDFN Exposed Pad
Siste nytt
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