SSM3J35CT,L3F Priser (USD) [2200504stk Lager]
- 1 pcs$0.01681
- Delnummer:
- SSM3J35CT,L3F
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET P-CHANNEL 20V 100MA CST3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Transistorer - Bipolar (BJT) - Singel, Transistorer - spesialformål, Transistorer - JFET-er, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - RF, Dioder - Zener - Arrays and Tyristorer - SCR-er - moduler ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage SSM3J35CT,L3F electronic components. SSM3J35CT,L3F can be shipped within 24 hours after order. If you have any demands for SSM3J35CT,L3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3J35CT,L3F Produktegenskaper
Delnummer :
SSM3J35CT,L3F
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET P-CHANNEL 20V 100MA CST3
Serie :
π-MOSVI
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.2V, 4V
Rds On (Max) @ Id, vgs :
8 Ohm @ 50mA, 4V
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
-
Vgs (maks) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
12.2pF @ 3V
FET-funksjon :
-
Effektdissipasjon (maks) :
100mW (Ta)
Driftstemperatur :
150°C
Monteringstype :
Surface Mount
Leverandørenhetspakke :
CST3
Pakke / sak :
SC-101, SOT-883
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