APTM100H35FT3G Priser (USD) [934stk Lager]
- 1 pcs$50.00678
- 100 pcs$49.75799
- Delnummer:
- APTM100H35FT3G
- Produsent:
- Microsemi Corporation
- Detaljert beskrivelse:
- MOSFET 4N-CH 1000V 22A SP3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - programmerbar enhet, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - RF, Transistorer - FET, MOSFET - RF, Power Driver-moduler, Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - Zener - Singel and Transistorer - IGBT-er - Arrays ...
- Konkurransefordel:
- We specialize in Microsemi Corporation APTM100H35FT3G electronic components. APTM100H35FT3G can be shipped within 24 hours after order. If you have any demands for APTM100H35FT3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTM100H35FT3G Produktegenskaper
Delnummer :
APTM100H35FT3G
Produsent :
Microsemi Corporation
Beskrivelse :
MOSFET 4N-CH 1000V 22A SP3
Serie :
-
Delstatus :
Active
FET Type :
4 N-Channel (H-Bridge)
FET-funksjon :
Standard
Drenering til kildespenning (Vdss) :
1000V (1kV)
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
22A
Rds On (Max) @ Id, vgs :
420 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id :
5V @ 2.5mA
Gate Lading (Qg) (Max) @ Vgs :
186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
5200pF @ 25V
Kraft - Maks :
390W
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Chassis Mount
Pakke / sak :
SP3
Leverandørenhetspakke :
SP3
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