NVMFSW6D1N08HT1G Priser (USD) [125731stk Lager]
- 1 pcs$0.29418
- Delnummer:
- NVMFSW6D1N08HT1G
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- T8 80V 1 PART PROLIFERATI.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - programmerbar enhet, Transistorer - FET, MOSFET - En, Dioder - Zener - Arrays, Dioder - likerettere - singel, Power Driver-moduler, Tyristorer - SCR-er - moduler and Tyristorer - DIAC, SIDAC ...
- Konkurransefordel:
- We specialize in ON Semiconductor NVMFSW6D1N08HT1G electronic components. NVMFSW6D1N08HT1G can be shipped within 24 hours after order. If you have any demands for NVMFSW6D1N08HT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFSW6D1N08HT1G Produktegenskaper
Delnummer :
NVMFSW6D1N08HT1G
Produsent :
ON Semiconductor
Beskrivelse :
T8 80V 1 PART PROLIFERATI
Serie :
Automotive, AEC-Q101
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
80V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
17A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
5.5 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
4V @ 120µA
Gate Lading (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2085pF @ 40V
FET-funksjon :
-
Effektdissipasjon (maks) :
3.8W (Ta), 104W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
5-DFN (5x6) (8-SOFL)
Pakke / sak :
8-PowerTDFN, 5 Leads
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