R6020ENZ1C9 Priser (USD) [24228stk Lager]
- 1 pcs$1.87297
- 10 pcs$1.67246
- 100 pcs$1.37141
- 500 pcs$1.05356
- 1,000 pcs$0.88855
- Delnummer:
- R6020ENZ1C9
- Produsent:
- Rohm Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 600V 20A TO247.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Tyristorer - DIAC, SIDAC, Power Driver-moduler, Transistorer - Bipolar (BJT) - Arrays, Tyristorer - SCR, Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor and Transistorer - JFET-er ...
- Konkurransefordel:
- We specialize in Rohm Semiconductor R6020ENZ1C9 electronic components. R6020ENZ1C9 can be shipped within 24 hours after order. If you have any demands for R6020ENZ1C9, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
R6020ENZ1C9 Produktegenskaper
Delnummer :
R6020ENZ1C9
Produsent :
Rohm Semiconductor
Beskrivelse :
MOSFET N-CH 600V 20A TO247
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
196 mOhm @ 9.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
60nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
120W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-247
Pakke / sak :
TO-247-3
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