TPH3206LDGB Priser (USD) [8659stk Lager]
- 1 pcs$5.33247
- 10 pcs$4.79922
- 100 pcs$3.94603
- 500 pcs$3.30613
- Delnummer:
- TPH3206LDGB
- Produsent:
- Transphorm
- Detaljert beskrivelse:
- GANFET N-CH 650V 16A PQFN.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Transistorer - Bipolar (BJT) - RF, Dioder - Bridge likerettere, Transistorer - FET, MOSFET - RF, Transistorer - IGBT-er - moduler, Dioder - likerettere - singel, Transistorer - IGBT-er - Arrays and Dioder - likerettere - matriser ...
- Konkurransefordel:
- We specialize in Transphorm TPH3206LDGB electronic components. TPH3206LDGB can be shipped within 24 hours after order. If you have any demands for TPH3206LDGB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPH3206LDGB Produktegenskaper
Delnummer :
TPH3206LDGB
Produsent :
Transphorm
Beskrivelse :
GANFET N-CH 650V 16A PQFN
Serie :
-
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
GaNFET (Gallium Nitride)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
180 mOhm @ 11A, 8V
Vgs (th) (Max) @ Id :
2.6V @ 500µA
Gate Lading (Qg) (Max) @ Vgs :
9.3nC @ 4.5V
Vgs (maks) :
±18V
Input Capacitance (Ciss) (Max) @ Vds :
760pF @ 480V
FET-funksjon :
-
Effektdissipasjon (maks) :
81W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PQFN (8x8)
Pakke / sak :
3-PowerDFN
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