IRF6898MTRPBF Priser (USD) [74317stk Lager]
- 1 pcs$0.73959
- 4,800 pcs$0.73591
- Delnummer:
- IRF6898MTRPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 25V 35A DIRECTFET.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Dioder - RF, Transistorer - IGBT-er - moduler, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - RF and Tyristorer - SCR ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF6898MTRPBF electronic components. IRF6898MTRPBF can be shipped within 24 hours after order. If you have any demands for IRF6898MTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6898MTRPBF Produktegenskaper
Delnummer :
IRF6898MTRPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 25V 35A DIRECTFET
Serie :
HEXFET®
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
25V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
35A (Ta), 213A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
1.1 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 100µA
Gate Lading (Qg) (Max) @ Vgs :
62nC @ 4.5V
Vgs (maks) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
5435pF @ 13V
FET-funksjon :
Schottky Diode (Body)
Effektdissipasjon (maks) :
2.1W (Ta), 78W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DIRECTFET™ MX
Pakke / sak :
DirectFET™ Isometric MX
Siste nytt
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