DMT6009LK3-13 Priser (USD) [194738stk Lager]
- 1 pcs$0.18993
- 2,500 pcs$0.16810
- Delnummer:
- DMT6009LK3-13
- Produsent:
- Diodes Incorporated
- Detaljert beskrivelse:
- MOSFET BVDSS 41V 60V TO252.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - Arrays, Transistorer - Bipolar (BJT) - Arrays, Transistorer - Bipolar (BJT) - Singel, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - Bipolar (BJT) - RF, Dioder - Zener - Arrays and Dioder - likerettere - matriser ...
- Konkurransefordel:
- We specialize in Diodes Incorporated DMT6009LK3-13 electronic components. DMT6009LK3-13 can be shipped within 24 hours after order. If you have any demands for DMT6009LK3-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT6009LK3-13 Produktegenskaper
Delnummer :
DMT6009LK3-13
Produsent :
Diodes Incorporated
Beskrivelse :
MOSFET BVDSS 41V 60V TO252
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
13.3A (Ta), 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
10 mOhm @ 13.5A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
33.5nC @ 10V
Vgs (maks) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
1925pF @ 30V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.6W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TO-252
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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