IPL60R299CPAUMA1 Priser (USD) [64945stk Lager]
- 1 pcs$0.60206
- Delnummer:
- IPL60R299CPAUMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 650V 11.1A 4VSON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Tyristorer - SCR, Dioder - likerettere - matriser, Transistorer - Bipolar (BJT) - RF, Transistorer - programmerbar enhet, Transistorer - IGBT-er - moduler, Transistorer - IGBT-er - Arrays and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPL60R299CPAUMA1 electronic components. IPL60R299CPAUMA1 can be shipped within 24 hours after order. If you have any demands for IPL60R299CPAUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPL60R299CPAUMA1 Produktegenskaper
Delnummer :
IPL60R299CPAUMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 650V 11.1A 4VSON
Serie :
CoolMOS™
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
299 mOhm @ 6.6A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 440µA
Gate Lading (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
96W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-VSON-4
Pakke / sak :
4-PowerTSFN
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