FDP050AN06A0 Priser (USD) [37862stk Lager]
- 1 pcs$1.03271
- 10 pcs$0.93278
- 100 pcs$0.74970
- 500 pcs$0.58311
- 1,000 pcs$0.48315
- Delnummer:
- FDP050AN06A0
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 60V 80A TO-220AB.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - likerettere - matriser, Transistorer - FET, MOSFET - En, Transistorer - spesialformål, Dioder - Bridge likerettere, Dioder - Zener - Singel, Tyristorer - TRIAC, Transistorer - Bipolar (BJT) - RF and Dioder - Zener - Arrays ...
- Konkurransefordel:
- We specialize in ON Semiconductor FDP050AN06A0 electronic components. FDP050AN06A0 can be shipped within 24 hours after order. If you have any demands for FDP050AN06A0, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDP050AN06A0 Produktegenskaper
Delnummer :
FDP050AN06A0
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 60V 80A TO-220AB
Serie :
PowerTrench®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
18A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
5 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
245W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220-3
Pakke / sak :
TO-220-3
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