SI4501BDY-T1-GE3 Priser (USD) [344842stk Lager]
- 1 pcs$0.10726
- 2,500 pcs$0.10093
- Delnummer:
- SI4501BDY-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N/P-CH 30V/8V 8SOIC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Transistorer - IGBT-er - singel, Transistorer - IGBT-er - moduler, Transistorer - programmerbar enhet, Transistorer - IGBT-er - Arrays, Dioder - Bridge likerettere, Tyristorer - TRIAC and Transistorer - FET, MOSFET - En ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI4501BDY-T1-GE3 electronic components. SI4501BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4501BDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4501BDY-T1-GE3 Produktegenskaper
Delnummer :
SI4501BDY-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N/P-CH 30V/8V 8SOIC
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
N and P-Channel, Common Drain
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
30V, 8V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
12A, 8A
Rds On (Max) @ Id, vgs :
17 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
805pF @ 15V
Kraft - Maks :
4.5W, 3.1W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
Leverandørenhetspakke :
8-SOIC
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