RUC002N05HZGT116 Priser (USD) [2710765stk Lager]
- 1 pcs$0.01364
- Delnummer:
- RUC002N05HZGT116
- Produsent:
- Rohm Semiconductor
- Detaljert beskrivelse:
- 1.2V DRIVE NCH MOSFET.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - likerettere - singel, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Tyristorer - TRIAC, Tyristorer - SCR, Dioder - RF, Transistorer - FET, MOSFET - Arrays and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in Rohm Semiconductor RUC002N05HZGT116 electronic components. RUC002N05HZGT116 can be shipped within 24 hours after order. If you have any demands for RUC002N05HZGT116, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RUC002N05HZGT116 Produktegenskaper
Delnummer :
RUC002N05HZGT116
Produsent :
Rohm Semiconductor
Beskrivelse :
1.2V DRIVE NCH MOSFET
Serie :
Automotive, AEC-Q101
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
50V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.2V, 4.5V
Rds On (Max) @ Id, vgs :
-
Vgs (th) (Max) @ Id :
1V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
-
Vgs (maks) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
25pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
350mW (Ta)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
SST3
Pakke / sak :
TO-236-3, SC-59, SOT-23-3
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