IPA030N10N3GXKSA1 Priser (USD) [25396stk Lager]
- 1 pcs$1.62280
- Delnummer:
- IPA030N10N3GXKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 79A TO220-FP.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - RF, Transistorer - IGBT-er - singel, Tyristorer - SCR-er - moduler, Tyristorer - SCR, Dioder - Zener - Arrays and Tyristorer - TRIAC ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPA030N10N3GXKSA1 electronic components. IPA030N10N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPA030N10N3GXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPA030N10N3GXKSA1 Produktegenskaper
Delnummer :
IPA030N10N3GXKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 79A TO220-FP
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
3 mOhm @ 79A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 270µA
Gate Lading (Qg) (Max) @ Vgs :
206nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
14800pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
41W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO220-FP
Pakke / sak :
TO-220-3 Full Pack
Siste nytt
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