IXFX52N60Q2 Priser (USD) [4482stk Lager]
- 1 pcs$10.68357
- 30 pcs$10.63042
- Delnummer:
- IXFX52N60Q2
- Produsent:
- IXYS
- Detaljert beskrivelse:
- MOSFET N-CH 600V 52A PLUS247.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - programmerbar enhet, Transistorer - FET, MOSFET - En, Transistorer - IGBT-er - moduler, Power Driver-moduler and Transistorer - FET, MOSFET - Arrays ...
- Konkurransefordel:
- We specialize in IXYS IXFX52N60Q2 electronic components. IXFX52N60Q2 can be shipped within 24 hours after order. If you have any demands for IXFX52N60Q2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX52N60Q2 Produktegenskaper
Delnummer :
IXFX52N60Q2
Produsent :
IXYS
Beskrivelse :
MOSFET N-CH 600V 52A PLUS247
Serie :
HiPerFET™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
115 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 8mA
Gate Lading (Qg) (Max) @ Vgs :
198nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
735W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PLUS247™-3
Pakke / sak :
TO-247-3
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