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- Delnummer:
- IRF7807D1TR
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 30V 8.3A 8-SOIC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Dioder - RF, Transistorer - IGBT-er - Arrays, Transistorer - programmerbar enhet, Dioder - Zener - Arrays, Transistorer - FET, MOSFET - Arrays, Dioder - Zener - Singel and Transistorer - IGBT-er - moduler ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF7807D1TR electronic components. IRF7807D1TR can be shipped within 24 hours after order. If you have any demands for IRF7807D1TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7807D1TR Produktegenskaper
Delnummer :
IRF7807D1TR
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 30V 8.3A 8-SOIC
Serie :
FETKY™
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V
Rds On (Max) @ Id, vgs :
25 mOhm @ 7A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
17nC @ 5V
Vgs (maks) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
-
FET-funksjon :
Schottky Diode (Isolated)
Effektdissipasjon (maks) :
2.5W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SO
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
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