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- Delnummer:
- BSB012N03LX3 G
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 30V 180A 2WDSON.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - DIAC, SIDAC, Transistorer - JFET-er, Power Driver-moduler, Transistorer - FET, MOSFET - Arrays, Transistorer - IGBT-er - moduler, Dioder - Bridge likerettere, Dioder - RF and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies BSB012N03LX3 G electronic components. BSB012N03LX3 G can be shipped within 24 hours after order. If you have any demands for BSB012N03LX3 G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSB012N03LX3 G Produktegenskaper
Delnummer :
BSB012N03LX3 G
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 30V 180A 2WDSON
Serie :
OptiMOS™
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
39A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
1.2 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
169nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
16900pF @ 15V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.8W (Ta), 89W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
MG-WDSON-2, CanPAK M™
Pakke / sak :
3-WDSON
Siste nytt
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