TSM033NB04LCR RLG Priser (USD) [114169stk Lager]
- 1 pcs$0.32397
- Delnummer:
- TSM033NB04LCR RLG
- Produsent:
- Taiwan Semiconductor Corporation
- Detaljert beskrivelse:
- MOSFET SINGLE N-CHANNEL TRENCH.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Tyristorer - SCR-er - moduler, Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - IGBT-er - moduler, Transistorer - programmerbar enhet, Power Driver-moduler and Tyristorer - DIAC, SIDAC ...
- Konkurransefordel:
- We specialize in Taiwan Semiconductor Corporation TSM033NB04LCR RLG electronic components. TSM033NB04LCR RLG can be shipped within 24 hours after order. If you have any demands for TSM033NB04LCR RLG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM033NB04LCR RLG Produktegenskaper
Delnummer :
TSM033NB04LCR RLG
Produsent :
Taiwan Semiconductor Corporation
Beskrivelse :
MOSFET SINGLE N-CHANNEL TRENCH
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
21A (Ta), 121A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
3.3 mOhm @ 21A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
79nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4456pF @ 20V
FET-funksjon :
-
Effektdissipasjon (maks) :
3.1W (Ta), 107W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-PDFN (5x6)
Pakke / sak :
8-PowerTDFN
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