IXFX64N60P Priser (USD) [5743stk Lager]
- 1 pcs$8.67298
- 10 pcs$7.50071
- 100 pcs$6.37561
- Delnummer:
- IXFX64N60P
- Produsent:
- IXYS
- Detaljert beskrivelse:
- MOSFET N-CH 600V 64A PLUS247.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Singel, Tyristorer - SCR, Tyristorer - DIAC, SIDAC, Transistorer - programmerbar enhet, Transistorer - FET, MOSFET - Arrays and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
- Konkurransefordel:
- We specialize in IXYS IXFX64N60P electronic components. IXFX64N60P can be shipped within 24 hours after order. If you have any demands for IXFX64N60P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX64N60P Produktegenskaper
Delnummer :
IXFX64N60P
Produsent :
IXYS
Beskrivelse :
MOSFET N-CH 600V 64A PLUS247
Serie :
HiPerFET™, PolarHT™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
96 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Gate Lading (Qg) (Max) @ Vgs :
200nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
12000pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
1040W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PLUS247™-3
Pakke / sak :
TO-247-3
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