IPB180N03S4L01ATMA1 Priser (USD) [68218stk Lager]
- 1 pcs$0.57317
- 1,000 pcs$0.52583
- Delnummer:
- IPB180N03S4L01ATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 30V 180A TO263-7-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Dioder - Bridge likerettere, Transistorer - Bipolar (BJT) - RF, Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - spesialformål, Dioder - Variabel kapasitet (Varicaps, Varactors) and Tyristorer - DIAC, SIDAC ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPB180N03S4L01ATMA1 electronic components. IPB180N03S4L01ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB180N03S4L01ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB180N03S4L01ATMA1 Produktegenskaper
Delnummer :
IPB180N03S4L01ATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 30V 180A TO263-7-3
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
1.05 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 140µA
Gate Lading (Qg) (Max) @ Vgs :
239nC @ 10V
Vgs (maks) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
17600pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
188W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO263-7-3
Pakke / sak :
TO-263-7, D²Pak (6 Leads + Tab)
Siste nytt
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