IPP70N10S312AKSA1 Priser (USD) [48456stk Lager]
- 1 pcs$0.74004
- 10 pcs$0.66896
- 100 pcs$0.53768
- 500 pcs$0.41820
- 1,000 pcs$0.32777
- Delnummer:
- IPP70N10S312AKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 70A TO220-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - programmerbar enhet, Transistorer - IGBT-er - singel, Tyristorer - SCR, Transistorer - spesialformål, Transistorer - FET, MOSFET - Arrays and Dioder - RF ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPP70N10S312AKSA1 electronic components. IPP70N10S312AKSA1 can be shipped within 24 hours after order. If you have any demands for IPP70N10S312AKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP70N10S312AKSA1 Produktegenskaper
Delnummer :
IPP70N10S312AKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 70A TO220-3
Serie :
OptiMOS™
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
11.6 mOhm @ 70A, 10V
Vgs (th) (Max) @ Id :
4V @ 83µA
Gate Lading (Qg) (Max) @ Vgs :
66nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4355pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
125W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO220-3-1
Pakke / sak :
TO-220-3
Siste nytt
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