IRFU13N20DPBF Priser (USD) [67281stk Lager]
- 1 pcs$0.56025
- 10 pcs$0.49587
- 100 pcs$0.39180
- 500 pcs$0.28741
- 1,000 pcs$0.22690
- Delnummer:
- IRFU13N20DPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 200V 13A I-PAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Dioder - RF, Transistorer - Bipolar (BJT) - Singel, Dioder - Zener - Singel, Transistorer - programmerbar enhet, Transistorer - IGBT-er - moduler, Tyristorer - DIAC, SIDAC and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFU13N20DPBF electronic components. IRFU13N20DPBF can be shipped within 24 hours after order. If you have any demands for IRFU13N20DPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFU13N20DPBF Produktegenskaper
Delnummer :
IRFU13N20DPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 200V 13A I-PAK
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
235 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
830pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
110W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
IPAK (TO-251)
Pakke / sak :
TO-251-3 Short Leads, IPak, TO-251AA
Siste nytt
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