SQD19P06-60L_GE3 Priser (USD) [130121stk Lager]
- 1 pcs$0.69823
- 10 pcs$0.61670
- 100 pcs$0.48746
- 500 pcs$0.37802
- 1,000 pcs$0.28230
- Delnummer:
- SQD19P06-60L_GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET P-CH 60V 20A TO252.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Power Driver-moduler, Transistorer - Bipolar (BJT) - RF, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - IGBT-er - Arrays, Transistorer - IGBT-er - moduler, Transistorer - FET, MOSFET - Arrays and Tyristorer - DIAC, SIDAC ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SQD19P06-60L_GE3 electronic components. SQD19P06-60L_GE3 can be shipped within 24 hours after order. If you have any demands for SQD19P06-60L_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQD19P06-60L_GE3 Produktegenskaper
Delnummer :
SQD19P06-60L_GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET P-CH 60V 20A TO252
Serie :
Automotive, AEC-Q101, TrenchFET®
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
55 mOhm @ 19A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1490pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
46W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TO-252, (D-Pak)
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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