IPP05CN10NGXKSA1 Priser (USD) [39937stk Lager]
- 1 pcs$0.97905
- 500 pcs$0.94760
- Delnummer:
- IPP05CN10NGXKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 100A TO-220.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - JFET-er, Dioder - likerettere - matriser, Transistorer - programmerbar enhet, Transistorer - Bipolar (BJT) - RF, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - Arrays, Transistorer - FET, MOSFET - Arrays and Transistorer - IGBT-er - moduler ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPP05CN10NGXKSA1 electronic components. IPP05CN10NGXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP05CN10NGXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP05CN10NGXKSA1 Produktegenskaper
Delnummer :
IPP05CN10NGXKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 100A TO-220
Serie :
OptiMOS™
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
5.4 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
181nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
12000pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
300W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO220-3
Pakke / sak :
TO-220-3
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